Material |
Symbol |
MP (°C) |
S/D |
g/cm3 |
Temp.(°C) for Given Vap. Press.
(Torr) |
Evaporation Techniques |
Sputter |
Comments |
10-8 |
10-6 |
10-4 |
E-Beam |
Crucible |
Coil |
Boat |
Basket |
Samarium |
Sm |
1074 |
|
7.52 |
373 |
460 |
573 |
G |
Al2O3 |
- |
Ta |
- |
RF,
DC |
- |
Samarium Oxide |
Sm2O3 |
2350 |
|
8.35 |
- |
- |
- |
G |
ThO2 |
- |
Ir |
- |
RF,
RF-R |
Loses
oxygen. Films smooth, clear. |
Samarium Sulfide |
Sm2S3 |
1900 |
|
5.73 |
- |
- |
- |
G |
- |
- |
- |
- |
- |
- |
Scandium |
Sc |
1541 |
|
2.99 |
714 |
837 |
1002 |
Ex |
Al2O3, BeO |
- |
W |
- |
RF |
Alloys with tantalum. |
Scandium Oxide |
Sc2O3 |
2300 |
|
3.86 |
- |
- |
~400 |
F |
- |
- |
- |
- |
RF,
RF-R |
- |
Selenium |
Se |
217 |
|
4.81 |
89 |
125 |
170 |
G |
Al2O3, VC |
W,
Mo |
W,
Mo |
W,
Mo |
RF,
DC |
Toxic. Bad for vacuum systems. |
Silicon |
Si |
1410 |
|
2.32 |
992 |
1147 |
1337 |
F |
BeO,
Ta, VC |
- |
W,
Ta |
- |
DC,
RF |
Alloys with tungsten; use heavy tungsten boat. SiO produced
above 4 x 10-6 Torr. E-beam best. |
Silicon Boride |
SiB6 |
- |
|
- |
- |
- |
- |
P |
- |
- |
- |
- |
RF |
- |
Silicon Carbide |
SiC |
~2700 |
S,
D |
3.22 |
- |
- |
1000 |
- |
- |
- |
- |
- |
RF |
Sputtering preferred. n = 2.654, 2.697 |
Silicon Nitride |
Si3N4 |
1900 |
|
3.44 |
- |
- |
~800 |
- |
- |
- |
- |
- |
RF,
RF-R |
- |
Silicon (II) Oxide |
SiO |
>1702 |
S |
2.13 |
- |
- |
850 |
F |
Ta |
W |
Ta |
W |
RF,
RF-R |
For
resistance evaporation, use baffle box and low rate. n =
1.6 |
Silicon (IV) Oxide |
SiO2 |
1610 |
|
~2.65 |
* |
* |
1025* |
Ex |
Al2O3 |
- |
- |
- |
RF |
Quartz excellent in E-beam. n = 1.544, 1.553 |
Silicon Selenide |
SiSe |
- |
|
- |
- |
- |
550 |
- |
Q |
- |
- |
- |
RF |
- |
Silicon Sulfide |
SiS |
940 |
S |
1.85 |
- |
- |
450 |
- |
Q |
- |
- |
- |
RF |
n =
1.853 |
Silicon Telluride |
SiTe2 |
- |
|
4.39 |
- |
- |
550 |
- |
Q |
- |
- |
- |
RF |
- |
Silver |
Ag |
962 |
|
10.5 |
847 |
958 |
1105 |
Ex |
Al2O3 |
Mo |
W |
Ta,
Mo |
W |
DC,
RF |
Silver Bromide |
AgBr |
432 |
D |
6.47 |
- |
- |
~380 |
- |
Q |
- |
Ta |
- |
RF |
n =
2.253 |
Silver Chloride |
AgCl |
455 |
|
5.56 |
- |
- |
~520 |
- |
Q |
- |
Mo,
Pt |
Mo |
RF |
n =
2.07 |
Silver Iodide |
AgI |
558 |
|
6.01 |
- |
- |
~500 |
- |
- |
- |
Ta |
- |
RF |
n =
2.21 |
Sodium |
Na |
98 |
|
0.97 |
74 |
124 |
192 |
- |
Q |
- |
Ta,
SS |
- |
- |
Preheat gently to outgas. Metal reacts quickly in air.n =
4.22 |
Sodium Bromide |
NaBr |
747 |
|
3.20 |
- |
- |
~400 |
- |
Q |
- |
- |
- |
RF |
Preheat gently to outgas. n = 1.641 |
Sodium Chloride |
NaCl |
801 |
|
2.17 |
- |
- |
530 |
G |
Q |
- |
Ta, W,
Mo |
- |
RF |
Copper oven, little decomposition. Preheat gently to
outgas. n = 1.544 |
Sodium Cyanide |
NaCN |
564 |
|
- |
- |
- |
~550 |
- |
- |
- |
Ag |
- |
RF |
Preheat gently to outgas. n = 1.452 |
Sodium Fluoride |
NaF |
993 |
|
2.56 |
- |
- |
~1000 |
G |
BeO |
- |
Mo,
Ta, W |
- |
RF |
Preheat gently to outgas. No decomposition. n =
1.336 |
Sodium Hydroxide |
NaOH |
318 |
|
2.13 |
- |
- |
~470 |
- |
- |
- |
Pt |
- |
- |
Preheat gently to outgas. n = 1.358 |
Spinel |
MgO35Al2O3 |
- |
|
8.0 |
- |
- |
- |
G |
- |
- |
- |
- |
RF |
n =
1.72 |
Strontium |
Sr |
769 |
|
2.6 |
239 |
309 |
403 |
P |
VC |
W |
W, Ta,
Mo |
W |
RF,
DC |
Wets
but does not alloy with refractory metals. May react in
air. |
Strontium Chloride |
SrCl2 |
875 |
|
3.05 |
- |
- |
- |
- |
- |
- |
- |
- |
- |
n =
1.650 |
Strontium Fluoride |
SrF2 |
1473 |
|
4.24 |
- |
- |
~1000 |
- |
Al2O3 |
- |
- |
- |
RF |
n =
1.442 |
Strontium Oxide |
SrO |
2430 |
S |
4.7 |
- |
- |
1500 |
- |
Al2O3 |
- |
Mo |
- |
RF |
Reacts with molybdenum and tungsten. n = 1.810 |
Strontium Sulfide |
SrS |
>2000 |
|
3.70 |
- |
- |
- |
- |
- |
- |
Mo |
- |
RF |
Decomposes. n = 2.107 |
Sulfur |
S8 |
113 |
|
2.07 |
13 |
19 |
57 |
P |
Q |
- |
W |
W |
- |
Bad
for vacuum systems. n = 1.957 |
Supermalloy |
Ni/Fe/Mo |
1410 |
|
8.9 |
- |
- |
- |
G |
- |
- |
- |
- |
RF,
DC |
Sputtering preferred; or co-evaporate from two sources,
permalloy and molybdenum. |
Tantalum |
Ta |
2996 |
|
16.6 |
1960 |
2240 |
2590 |
Ex |
- |
- |
- |
- |
DC,
RF |
Forms
good films. |
Tantalum Boride |
TaB2 |
3000(?) |
|
11.15 |
- |
- |
- |
- |
- |
- |
- |
- |
RF,
DC |
- |
Tantalum Carbide |
TaC |
3880 |
|
13.9 |
- |
- |
~2500 |
- |
- |
- |
- |
- |
RF,
DC |
- |
Tantalum Nitride |
TaN |
3360 |
|
16.30 |
- |
- |
- |
- |
- |
- |
- |
- |
RF,
RF-R, DC |
Evaporates tantalum in 10-3 Torr
nitrogen. |
Tantalum Pentoxide |
Ta2O5 |
1872 |
|
8.2 |
1550 |
1780 |
1920 |
G |
VC |
W |
Ta |
W |
RF,
RF-R |
Slight decomposition.Evaporates in 10-3 Torr
oxygen. n = 2.6 |
Tantalum Sulfide |
TaS2 |
>1300 |
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
RF |
- |
Technetium |
Tc |
2200 |
|
11.5 |
1570 |
1800 |
2090 |
- |
- |
- |
- |
- |
- |
- |
Teflon |
PTFE |
330 |
|
2.9 |
- |
- |
- |
- |
- |
- |
W |
- |
RF |
Baffled source. Film structure doubtful. |
Tellurium |
Te |
452 |
|
6.25 |
157 |
207 |
277 |
P |
Al2O3, Q |
W |
W,
Ta |
W,
Ta |
RF |
Toxic. Wets without alloying. n =1.002 |
Terbium |
Tb |
1356 |
|
8.23 |
800 |
950 |
1150 |
Ex |
Al2O3 |
- |
Ta |
- |
RF |
- |
Terbium Fluoride |
TbF3 |
1172 |
|
- |
- |
- |
~800 |
- |
- |
- |
- |
- |
RF |
- |
Terbium Oxide |
Tb2O3 |
2387 |
|
7.87 |
- |
- |
1300 |
- |
- |
- |
Ir |
- |
RF |
Partially decomposes. |
Terbium Peroxide |
Tb4O7 |
- |
D |
- |
- |
- |
- |
- |
- |
- |
Ta |
- |
RF |
Films
TbO. |
Thallium |
Tl |
304 |
|
11.85 |
280 |
360 |
470 |
P |
Al2O3, Q |
- |
W,
Ta |
W |
DC |
Very
toxic. Wets freely. |
Thallium Bromide |
TlBr |
480 |
S |
7.56 |
- |
- |
~250 |
- |
Q |
- |
Ta |
- |
RF |
Toxic. n = 2.4 - 2.8 |
Thallium Chloride |
TlCl |
430 |
S |
7.00 |
- |
- |
~150 |
- |
Q |
- |
Ta |
- |
RF |
n =
2.247 |
Thallium Iodide |
TlI |
440 |
S |
7.1 |
- |
- |
~250 |
- |
Q |
- |
- |
- |
RF |
n =
2.78 |
Thallium Oxide |
Tl2O2 |
717 |
|
10.19 |
- |
- |
350 |
- |
- |
- |
- |
- |
RF |
Disproportionates at 850°C to Tl2O. |
Thorium |
Th |
1875 |
|
11.7 |
1430 |
1660 |
1925 |
Ex |
- |
W |
W,
Ta,Mo |
W |
- |
Toxic, radioactive. |
Thorium Bromide |
ThBr4 |
610 |
S |
5.67 |
- |
- |
- |
- |
- |
- |
Mo |
- |
- |
Toxic. n=2.47 |
Thorium Carbide |
ThC2 |
2655 |
|
8.96 |
- |
- |
~2300 |
- |
C |
- |
- |
- |
RF,
DC |
Radioactive. |
Thorium Fluoride |
ThF4 |
>900 |
|
6.32 |
- |
- |
~750 |
F |
VC |
- |
Mo |
W |
RF |
Radioactive. |
Thorium Oxide |
ThO2 |
3220 |
|
9.86 |
- |
- |
~2100 |
G |
- |
- |
W |
- |
RF,
RF-R |
Radioactive. |
Thorium Oxyfluoride |
ThOF2 |
900 |
|
9.1 |
- |
- |
- |
- |
- |
- |
Mo,
Ta |
- |
- |
Radioactive. n = 1.52 |
Thorium Sulfide |
ThS2 |
1925 |
|
7.30 |
- |
- |
- |
- |
- |
- |
- |
- |
RF |
Sputtering preferred; or co-evaporate from two
sources. |
Thulium |
Tm |
1545 |
S |
9.32 |
461 |
554 |
680 |
G |
Al2O3 |
- |
Ta |
- |
DC |
- |
Thulium Oxide |
Tm2O3 |
- |
|
8.90 |
- |
- |
1500 |
- |
- |
- |
Ir |
- |
RF |
Decomposes. |
Tin |
Sn |
232 |
|
7.28 |
682 |
807 |
997 |
Ex |
Al2O3 |
W |
Mo |
W |
DC,
RF |
Wets
molybdenum. Use tantalum liner in E-beam guns. |
Tin
Oxide |
SnO2 |
1630 |
S |
6.95 |
- |
- |
~1000 |
Ex |
Q,
Al2O3 |
W |
W |
W |
RF,
RF-R |
Films
from tungsten are oxygen deficient, oxidize in air. n =
2.0 |
Tin
Selenide |
SnSe |
861 |
|
6.18 |
- |
- |
~400 |
G |
Q |
- |
- |
- |
RF |
- |
Tin
Sulfide |
SnS |
882 |
|
5.22 |
- |
- |
~450 |
- |
Q |
- |
- |
- |
RF |
- |
Tin
Telluride |
SnTe |
780 |
D |
6.48 |
- |
- |
~450 |
- |
Q |
- |
- |
- |
RF |
- |
Titanium |
Ti |
1660 |
|
4.5 |
1067 |
1235 |
1453 |
Ex |
TiC |
- |
W |
- |
DC,
RF |
Alloys with refractory metals; evolves gas on first
heating. |
Titanium Boride |
TiB2 |
2900 |
|
4.50 |
- |
- |
- |
P |
- |
- |
- |
- |
RF,
DC |
- |
Titanium Carbide |
TiC |
3140 |
|
4.93 |
- |
- |
~2300 |
- |
- |
- |
- |
- |
RF,
DC |
- |
Titanium Nitride |
TiN |
2930 |
|
5.22 |
- |
- |
- |
G |
- |
- |
Mo |
- |
RF,
RF-R, DC |
Sputtering preferred. Decomposes with thermal
evaporation. |
Titanium (II) Oxide |
TiO |
1750 |
|
4.93 |
- |
- |
~1500 |
G |
VC |
- |
W,
Mo |
- |
RF |
Preheat gently to outgas. n = 2.2 |
Titanium (III) Oxide |
Ti2O3 |
2130 |
D |
4.6 |
- |
- |
- |
G |
- |
- |
W |
- |
RF |
Decomposes. |
Titanium (IV) Oxide |
TiO2 |
1830 |
|
4.26 |
- |
- |
~1300 |
F |
- |
- |
W,
Mo |
W |
RF,
RF-R |
Suboxide, must be reoxidized to rutile. Tantalum reduces
TiO2 to TiO and titanium. n = 2.616, 2.903 |
Tungsten |
W |
3410 |
|
19.35 |
2117 |
2407 |
2757 |
G |
- |
- |
- |
- |
RF,
DC |
Forms
volatile oxides. Films hard and adherent. |
Tungsten Boride |
WB2 |
~2900 |
|
10.77 |
- |
- |
- |
P |
- |
- |
- |
- |
RF |
- |
Tungsten Carbide |
W2C |
2860 |
|
17.15 |
1480 |
1720 |
2120 |
Ex |
- |
- |
C |
- |
RF,
DC |
- |
Tungsten Disulfide |
WS2 |
1250 |
D |
7.5 |
- |
- |
- |
- |
- |
- |
- |
- |
RF |
- |
Tungsten Oxide |
WO3 |
1473 |
S |
7.16 |
- |
- |
980 |
G |
- |
- |
W,
Pt |
- |
RF-R |
Preheat gently to outgas. Tungsten reduces oxide slightly. n
= 1.68 |
Tungsten Selenide |
WSe2 |
- |
|
9.0 |
- |
- |
- |
- |
- |
- |
- |
- |
RF |
- |
Tungsten Silicide |
WSi2 |
>900 |
|
9.4 |
- |
- |
- |
- |
- |
- |
- |
- |
RF,
DC |
- |
Tungsten Telluride |
WTe3 |
- |
|
9.49 |
- |
- |
- |
- |
Q |
- |
- |
- |
RF |
- |
Uranium |
U |
1132 |
|
19.05 |
1132 |
1327 |
1582 |
G |
- |
W |
Mo,
W |
W |
- |
Films
oxidize. |
Uranium Carbide |
UC2 |
2350 |
|
11.28 |
- |
- |
2100 |
- |
C |
- |
- |
- |
RF |
Decomposes. |
Uranium Fluoride |
UF4 |
960 |
|
6.70 |
- |
- |
300 |
- |
- |
- |
Ni |
- |
RF |
- |
Uranium (III) Oxide |
U2O3 |
1300 |
D |
8.30 |
- |
- |
- |
- |
- |
- |
W |
W |
RF-R |
Disproportionates at 1300°C to UO2. |
Uranium (IV) Oxide |
UO2 |
2878 |
|
10.96 |
- |
- |
- |
- |
- |
- |
W |
W |
RF |
Tantalum causes decomposition. |
Uranium Phosphide |
UP2 |
- |
|
8.57 |
- |
- |
1200 |
- |
- |
- |
Ta |
- |
RF |
Decomposes. |
Uranium (II) Sulfide |
US |
>2000 |
|
10.87 |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Uranium (IV) Sulfide |
US2 |
>1100 |
|
7.96 |
- |
- |
- |
- |
- |
- |
W |
- |
RF |
Slight decomposition. |
Vanadium |
V |
1890 |
|
5.96 |
1162 |
1332 |
1547 |
Ex |
- |
- |
W,
Mo |
- |
DC,
RF |
Wets
molybdenum. E-beam-evaporated films preferred. n = 3.03 |
Vanadium Boride |
VB2 |
2400 |
|
5.10 |
- |
- |
- |
- |
- |
- |
- |
- |
RF,
DC |
- |
Vanadium Carbide |
VC |
2810 |
|
5.77 |
- |
- |
~1800 |
- |
- |
- |
- |
- |
RF,
DC |
- |
Vanadium Nitride |
VN |
2320 |
|
6.13 |
- |
- |
- |
- |
- |
- |
- |
- |
RF,
RF-R, DC |
- |
Vanadium (IV) Oxide |
VO2 |
1967 |
S |
4.34 |
- |
- |
~575 |
- |
- |
- |
- |
- |
RF,
RF-R |
Sputtering preferred. |
Vanadium (V) Oxide |
V2O5 |
690 |
D |
3.36 |
- |
- |
~500 |
- |
Q |
- |
- |
- |
RF |
n =
1.46, 1.52, 1.76 |
Vanadium Silicide |
VSi2 |
1700 |
|
4.42 |
- |
- |
- |
- |
- |
- |
- |
- |
RF |
- |
Ytterbium |
Yb |
819 |
S |
6.96 |
520 |
590 |
690 |
G |
- |
- |
Ta |
- |
DC,
RF |
- |
Ytterbium Fluoride |
YbF3 |
1157 |
|
- |
- |
- |
~800 |
- |
- |
- |
Mo |
- |
RF |
- |
Ytterbium Oxide |
Yb2O3 |
2346 |
S |
9.17 |
- |
- |
~1500 |
- |
- |
- |
Ir |
- |
RF,
RF-R |
Loses
oxygen. |
Yttrium |
Y |
1522 |
|
4.47 |
830 |
973 |
1157 |
Ex |
Al2O3 |
W |
W,
Ta |
W |
RF,
DC |
High
tantalum solubility. |
Yttrium Aluminum Oxide |
Y3Al5O12 |
1990 |
|
- |
- |
- |
- |
G |
- |
W |
- |
W |
RF |
Films
not ferroelectric. |
Yttrium Fluoride |
YF3 |
1387 |
|
4.01 |
- |
- |
- |
- |
- |
- |
- |
- |
RF |
- |
Yttrium Oxide |
Y2O3 |
2410 |
|
5.01 |
- |
- |
~2000 |
G |
C |
- |
W |
- |
RF,
RF-R |
Loses
oxygen, films smooth and clear. n = 1.79 |
Zinc |
Zn |
420 |
|
7.14 |
127 |
177 |
250 |
Ex |
Al2O3, Q |
W |
Mo, W,
Ta |
W |
DC,
RF |
Evaporates well under wide range ofconditions. |
Zinc
Antimonide |
Zn3Sb2 |
570 |
|
6.33 |
- |
- |
- |
- |
- |
- |
- |
- |
RF |
- |
Zinc
Bromide |
ZnBr2 |
394 |
|
4.20 |
- |
- |
~300 |
- |
C |
- |
W |
- |
RF |
Decomposes. n= 1.545 |
Zinc
Fluoride |
ZnF2 |
872 |
|
4.95 |
- |
- |
~800 |
- |
Q |
- |
Pt,
Ta |
- |
RF |
- |
Zinc
Nitride |
Zn3N2 |
- |
|
6.22 |
- |
- |
- |
- |
- |
- |
Mo |
- |
RF |
Decomposes. |
Zinc
Oxide |
ZnO |
1975 |
|
5.61 |
- |
- |
~1800 |
F |
- |
- |
- |
- |
RF-R |
n =
2.008, 2.029 |
Zinc
Selenide |
ZnSe |
>1100 |
|
5.42 |
- |
- |
660 |
- |
Q |
W,Mo |
Ta, W,
Mo |
W,
Mo |
RF |
Preheat gently to outgas. Evaporates well. n =
2.89 |
Zinc
Sulfide |
ZnS |
1700 |
S |
3.98 |
- |
- |
~800 |
G |
- |
- |
Ta,
Mo |
- |
RF |
Preheat gently to outgas. Films partially decompose. Sticking
coefficient varies with substrate temperature. n =2.356 |
Zinc
Telluride |
ZnTe |
1239 |
|
6.34 |
- |
- |
~600 |
- |
- |
- |
Mo,
Ta |
- |
RF |
Preheat gently to outgas. n = 3.56 |
Zirconium |
Zr |
1852 |
|
6.49 |
1477 |
1702 |
1987 |
Ex |
- |
- |
W |
- |
RF,
DC |
Alloys with tungsten. <|>Films oxidize
readily. |
Zirconium Boride |
ZrB2 |
~3200 |
|
6.09 |
- |
- |
- |
G |
- |
- |
- |
- |
RF,
DC |
- |
Zirconium Carbide |
ZrC |
3540 |
|
6.73 |
- |
- |
~2500 |
- |
- |
- |
- |
- |
RF,
DC |
- |
Zirconium Nitride |
ZrN |
2980 |
|
7.09 |
- |
- |
- |
- |
- |
- |
- |
- |
RF,
RF-R, DC |
Reactively evaporates in 10-3 Torr
nitrogen. |
Zirconium Oxide |
ZrO2 |
~2700 |
|
5.89 |
- |
- |
~2200 |
G |
- |
- |
W |
- |
RF,
RF-R |
Films
oxygen deficient, clear and hard. n = 2.13, 2.19, 2.20 |
Zirconium Silicate |
ZrSiO4 |
2550 |
|
4.56 |
- |
- |
- |
- |
- |
- |
- |
- |
RF |
n =
1.92 - 1.96; 1.97 - 2.02 |
Zirconium Silicide |
ZrSi2 |
1700 |
|
4.88 |
- |
- |
- |
- |
- |
- |
- |
- |
RF,
DC |
- | |